Infineon BAT15-04RE6152: High-Performance Schottky Diode for RF and Microwave Applications
In the demanding world of radio frequency (RF) and microwave engineering, component selection is critical to achieving optimal system performance. The Infineon BAT15-04RE6152 stands out as a premier surface-mount Schottky diode, engineered specifically for high-frequency applications where low loss and high switching speed are paramount.
This diode is part of a family known for its exceptionally low barrier height, which directly translates to a very low forward voltage and minimal power consumption. This characteristic is vital for sensitive receiver front-ends and detector circuits, where preserving signal integrity is essential. Furthermore, the BAT15-04RE6152 boasts an ultra-fast switching response, enabling its effective use in high-speed mixing and switching applications well into the microwave frequency range. Its ability to quickly transition between states makes it indispensable in modern communication systems, including 5G infrastructure, satellite transceivers, and radar systems.
Housed in a compact and industry-standard SOT-23 package, the device is designed for excellent high-frequency performance with minimal parasitic effects. The package ensures good thermal stability and reliability, which are crucial for maintaining performance under varying operational conditions. Common applications for this versatile diode include:

Precision Mixing and Detection: Its low noise figure makes it ideal for down-conversion mixers and signal strength detectors.
High-Speed Switching: Used in pulse and modulator circuits where fast recovery is needed.
Sampling Gates: Employed in instruments requiring accurate signal sampling.
ICGOOODFIND: The Infineon BAT15-04RE6152 is a superior choice for RF and microwave designers seeking a reliable, high-performance Schottky diode. Its combination of low forward voltage, ultra-fast switching speed, and minimal parasitic package provides a critical advantage in designing efficient and sensitive high-frequency electronic systems.
Keywords: Schottky Diode, RF Applications, Microwave Mixer, Low Barrier Height, Ultra-Fast Switching
