Infineon IPB011N04N G: High-Performance OptiMOS 5 Power MOSFET for Advanced Automotive and Industrial Applications

The relentless pursuit of efficiency, power density, and reliability in power electronics drives the need for superior semiconductor components. The Infineon IPB011N04N G, a member of the esteemed OptiMOS™ 5 family, stands out as a benchmark for high-performance N-channel power MOSFETs engineered to meet the exacting demands of modern automotive and industrial systems.

This 40 V MOSFET is architected around Infineon’s advanced trench technology, which is the cornerstone of its exceptional performance. Its most striking feature is its ultra-low typical on-state resistance (RDS(on)) of just 1.1 mΩ, a figure that is among the best in its class. This exceptionally low resistance is pivotal in minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. This allows designers to create more compact systems by reducing the size of heat sinks or to push the boundaries of power output within the same form factor.

Beyond raw efficiency, the device is AEC-Q101 qualified, guaranteeing its robustness and reliability for use in the harsh environments typical of automotive applications. It is an ideal solution for a wide array of uses, including electric power steering (EPS), braking systems, and transmission control units, where failure is not an option. Its capabilities also extend to managing high inrush currents in pre-charge circuits for electric vehicle (EV) battery management systems (BMS).

In the industrial sphere, the IPB011N04N G excels in power supplies for servers and telecom equipment, motor drives, and solar inverters. Its ability to operate efficiently at high switching frequencies enables the design of smaller, lighter magnetics and filter components, which is crucial for increasing power density. The MOSFET’s optimized gate charge (Qg) ensures swift switching, further reducing switching losses and improving overall performance in high-frequency circuits. The PQFN 3.3x3.3 mm package offers a superior thermal connection to the PCB, enhancing power dissipation and enabling higher continuous current capability in a minimal footprint.

ICGOOODFIND Summary: The Infineon IPB011N04N G is a top-tier power MOSFET that sets a high standard for efficiency and power density. Its industry-leading low RDS(on), AEC-Q101 qualification, and excellent switching characteristics make it an indispensable component for engineers designing next-generation, high-reliability automotive and industrial power systems.

Keywords: OptiMOS™ 5, Ultra-low RDS(on), AEC-Q101 Qualified, High Power Density, Automotive Applications.