Infineon AUIRFR3710ZTRL Automotive Power MOSFET: Datasheet and Application Overview

The Infineon AUIRFR3710ZTRL represents a pinnacle of performance and reliability in the realm of automotive-grade power MOSFETs. Designed to meet the rigorous demands of the automotive industry, this N-channel MOSFET is engineered using Infineon's advanced UltraFRED mesh overlay technology, which delivers an exceptional balance of low on-state resistance and high switching speed. This makes it an ideal solution for a wide array of high-power, high-frequency switching applications under the hood.

A deep dive into the key specifications from its datasheet reveals the components core strengths. The device boasts an impressive maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 72A at a case temperature of 100°C, ensuring robust performance in demanding environments. Its most lauded feature is its extremely low typical on-state resistance (Rds(on)) of just 3.7 mΩ at 10V gate drive. This low resistance is critical for minimizing conduction losses, which directly translates to higher efficiency, reduced heat generation, and improved fuel economy in automotive systems. Furthermore, it features avalanche ruggedness and is 100% tested for Rg and UIS, guaranteeing maximum reliability and longevity.

The AUIRFR3710ZTRL is AEC-Q101 qualified, affirming its suitability for the harsh operating conditions found in automotive applications. It is housed in a D2PAK (TO-263) surface-mount package, which offers an excellent power-to-size ratio and superior thermal performance for effective heat dissipation away from the silicon die.

In application, this MOSFET is a prime candidate for use as a high-side or low-side switch in DC-DC converters and motor control circuits. It is extensively used in:

Electric Power Steering (EPS) systems

Brushed DC and BLDC motor drives for pumps, fans, and window lifters

Anti-lock Braking Systems (ABS)

Solid-State Relays (SSR) and load switches

Battery management and power distribution units

Its fast switching capabilities allow for higher frequency operation in converters, leading to smaller and lighter magnetic components. The integrated fast recovery body diode minimizes reverse recovery losses, which is vital for reducing electromagnetic interference (EMI) and improving efficiency in inductive switching scenarios.

ICGOOODFIND: The Infineon AUIRFR3710ZTRL stands out as a superior automotive power MOSFET, combining high current handling, remarkably low Rds(on), and avalanche ruggedness in a robust package. Its compliance with automotive standards makes it a trusted and efficient choice for designers aiming to enhance performance and reliability in next-generation vehicle electronic systems.

Keywords: Automotive MOSFET, Low Rds(on), UltraFRED, AEC-Q101, Power Switching